Depth-dependent critical behavior in V2H

C. I. del Genio, J. Trenkler, K. E. Bassler, P. Wochner, D. R. Häffner, G. F. Reiter, J. Bai and S. C. Moss
Phys. Rev. B 79, 184113 (2009)

Abstract

Using X-ray diffuse scattering, we investigate the critical behavior of an order-disorder phase transition in a defective "skin-layer" of V2H. In the skin-layer, there exist walls of dislocation lines oriented normal to the surface. The density of dislocation lines within a wall decreases continuously with depth. We find that, because of this inhomogeneous distribution of defects, the transition effectively occurs at a depth-dependent local critical temperature. A depth-dependent scaling law is proposed to describe the corresponding critical ordering behavior.


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